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3SK222 MOSFET N-Channel 18V 25mA SOT-143 marking V22 FM tuner and VHF TV tunerRF amplifier

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Product description
最大源漏极电压Vds Drain-Source Voltage18V
最大栅源极电压Vgs(±) Gate-Source Voltage8V
最大漏极电流Id Drain Current25mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage0-1V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD Features Silicon N-Channel Dual Gate MOS TYPE RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD The Characteristic of Cross-Modulation is good CM = 92 dBµ TYP. @ f = 200 MHz, GR = –30 dB Low Noise Figure: NF1 = 1.2 dB TYP. (f = 200 MHz) NF2 = 1.0 dB TYP. (f = 55 MHz) High Power Gain: GPS = 23 dB TYP. (f = 200 MHz) Enhancement Type Suitable for use as RF amplifier in FM tuner and VHF TV tuner Automatically Mounting: Embossed Type Taping Small Package: 4 Pins Mini Mold
描述与应用MOS场效应晶体管 FM调谐器和VHF电视调谐器RF放大器 硅N沟道双栅MOS场效应晶体管 4引脚MINI模具 特性 硅N沟道双栅MOS型 FM调谐器和甚高频电视调谐器RF放大器 硅N沟道双栅MOS场效应晶体管 4引脚迷你模具 交叉调制的特点是良好 CM= 92dBμ典型值。 @ F =200兆赫,GR=-30分贝 低噪声系数:NF1=1.2 dB典型值。 (六=200兆赫) NF2= 1.0 dB(典型值)。 (六= 55兆赫) 高功率增益:GPS=23 dB典型值。 (六=200兆赫) 增强型 适合用作FM调谐器和VHF电视调谐器RF放大器 自动安装:压花类型大坪 小包装:4针脚小型模具
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