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MTM86227 MOSFET N-Channel 20V 2.2A SOT-563/ES6 marking JF fast switch/low on-resistance

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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage10V
最大漏极电流Id Drain Current2.2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.105Ω/Ohm @4A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.4-1.3V
耗散功率Pd Power Dissipation540mW/0.54W
Description & Applications• Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Replaces MTD6N10
描述与应用•雪崩能量 •源漏二极管恢复时间等同于 离散快速恢复二极管 •二极管的特点是桥电路中使用 •IDSS和VDS(上) 指定高温 •替换MTD6N10
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