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MTM86227 MOSFET N-Channel 20V 2.2A SOT-563/ES6 marking JF fast switch/low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 2.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.105Ω/Ohm @4A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4-1.3V |
| 耗散功率Pd Power Dissipation | 540mW/0.54W |
| Description & Applications | • Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Replaces MTD6N10 |
| 描述与应用 | •雪崩能量 •源漏二极管恢复时间等同于 离散快速恢复二极管 •二极管的特点是桥电路中使用 •IDSS和VDS（上） 指定高温 •替换MTD6N10 |
