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BG3130 Complex FET 8 25mA SOT-363/SC70-6 marking KA VHF and UHF tuning

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Product description
最大源漏极电压Vds
Drain-Source Voltage
8V
最大栅源极电压Vgs(±)
Gate-Source Voltage
6~15V/6~15V
最大漏极电流Id
Drain Current
25mA
源漏极导通电阻Rds
Drain-Source On-State Resistance
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.7/0.6
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & ApplicationsDUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF and VHF -tuners e.g. (NTSC, PAL) • Two AGC amplifiers in one single package • Integrated gate protection diodes • High AGC-range, low noise figure, high gain • Improved cross modulation at gain reduction
描述与应用双N沟道MOSFET的四极管 •两个UHF和VHF调谐器,例如增益控制输入级(NTSC,PAL) •两个AGC放大器在一个单一封装 •集成的栅极保护二极管 •高AGC范围,低噪声系数,高增益 •改进的交叉调制增益降低
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