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BG3130 Complex FET 8 25mA SOT-363/SC70-6 marking KA VHF and UHF tuning
| 最大源漏极电压Vds Drain-Source Voltage | 8V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 6~15V/6~15V |
| 最大漏极电流Id Drain Current | 25mA |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.7/0.6 |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF and VHF -tuners e.g. (NTSC, PAL) • Two AGC amplifiers in one single package • Integrated gate protection diodes • High AGC-range, low noise figure, high gain • Improved cross modulation at gain reduction |
| 描述与应用 | 双N沟道MOSFET的四极管 •两个UHF和VHF调谐器，例如增益控制输入级（NTSC，PAL） •两个AGC放大器在一个单一封装 •集成的栅极保护二极管 •高AGC范围，低噪声系数，高增益 •改进的交叉调制增益降低 |
