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MMBT5087 PNP transistors(BJT) -50V -100mA/-0.1A 40MHz 250~800 -300mV/-0.3V SOT-23/SC-59 marking 2Q general amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
截止频率fT Transtion Frequency(fT) | 40MHz |
直流电流增益hFE DC Current Gain(hFE) | 250~800 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | -300mV/-0.3V |
耗散功率Pc PoWer Dissipation | 350mW/0.35W |
Description & Applications | PNP General Purpose Amplifier • This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. |
描述与应用 | PNP通用放大器 该设备是专为低层次,高增益,低噪声通用放大器应用在集电极电流为50mA。 |