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2SC4702XV NPN Transistors(BJT) 300V 50mA 80MHz 60~150 <500mV/0.5V SOT-23/SC-59/MPAK marking XV microwave low noiselow distortion amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 300V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 300V |
集电极连续输出电流IC Collector Current(IC) | 50mA |
截止频率fT Transtion Frequency(fT) | 80MHz |
直流电流增益hFE DC Current Gain(hFE) | 60~150 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | <500mV/0.5V |
耗散功率Pc Power Dissipation | 150mW/0.15W |
Description & Applications | Features •Silicon NPN Epitaxial •High breakdown voltage VCEO = 300 V •Small Cob Cob = 1.5 pF Typ. |
描述与应用 | 特点 •NPN硅外延 •高击穿电压VCEO=300 V •小COB COB=1.5 pF的典型 |