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2SC4702XV NPN Transistors(BJT) 300V 50mA 80MHz 60~150 <500mV/0.5V SOT-23/SC-59/MPAK marking XV microwave low noiselow distortion amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
300V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
300V
集电极连续输出电流IC
Collector Current(IC)
50mA
截止频率fT
Transtion Frequency(fT)
80MHz
直流电流增益hFE
DC Current Gain(hFE)
60~150
管压降VCE(sat)
Collector-Emitter Saturation Voltage
<500mV/0.5V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & ApplicationsFeatures •Silicon NPN Epitaxial •High breakdown voltage VCEO = 300 V •Small Cob Cob = 1.5 pF Typ.
描述与应用特点 •NPN硅外延 •高击穿电压VCEO=300 V •小COB COB=1.5 pF的典型
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