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PBSS302PD PNP transistors(BJT) -40V -4A 110MHz 200 -450mV/-0.45V SOT23-6/SC-74 marking C9 DC-DC converter/backlight inverter

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−40V
集电极连续输出电流IC
Collector Current(IC)
-4A
截止频率fT
Transtion Frequency(fT)
110MHz
直流电流增益hFE
DC Current Gain(hFE)
200
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−450mV/-0.45V
耗散功率Pc
PoWer Dissipation
360mW/0.36W
Description & Applications40 V PNP low VCEsat (BISS) transistor Features Low VCEsat Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current capability IC (DC) Up to 15 A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation SOT457 (SC-74) SMD plastic package. NPN complement: PBSS302ND Applications Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter
描述与应用40 V PNP低VCEsat(BISS)晶体管 特点 低VCEsat 超低集电极 - 发射极饱和电压VCE监测 4连续集电极电流能力IC(DC) 高达15 A峰值电流 极低的集电极 - 发射极饱和电阻 由于产生的热量少,效率高 SOT457(SC-74)SMD塑料包装。 NPN补充:PBSS302ND的 应用 电源管理功能。 充电电路 的DC-DC转换 MOSFET栅极驱动 电源开关(如电机,风机) 薄膜晶体管(TFT)背光逆变器
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