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SI3456CDV-T1-GE3 MOSFET N-Channel 30V 7.7A SOT-163/SOT23-6/TSOP-6 marking AP low on-resistance/low-voltage drive
最大源漏极电压Vds Drain-Source Voltage | 30V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 7.7A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.034Ω/Ohm @6.1A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1.2-3V |
耗散功率Pd Power Dissipation | 3.3W |
Description & Applications | N沟道30-V(D-S)的MOSFET FEATURES • TrenchFET Power MOSFET |
描述与应用 | N沟道30-V(D-S)的MOSFET 功率MOSFET |