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SI3456CDV-T1-GE3 MOSFET N-Channel 30V 7.7A SOT-163/SOT23-6/TSOP-6 marking AP low on-resistance/low-voltage drive

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current7.7A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.034Ω/Ohm @6.1A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.2-3V
耗散功率Pd Power Dissipation3.3W
Description & ApplicationsN沟道30-V(D-S)的MOSFET FEATURES • TrenchFET Power MOSFET
描述与应用 N沟道30-V(D-S)的MOSFET 功率MOSFET
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