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BSS84 MOSFET P-Channel -60V -130mA 1.2ohm SOT-23 marking SP small signal switch high saturation current
| 最大源漏极电压Vds Drain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -0.13A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 1.2Ω @-100mA,-5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.8--2.V |
| 耗散功率Pd Power Dissipation | 360mW/0.36W |
| Description & Applications | Features • −0.13A, −50V. RDS(ON) = 10Ω @ VGS = −5 V • Voltage controlled p-channel small signal switch • High density cell design for low RDS(ON) • High saturation current |
| 描述与应用 | •0.13A，-50V。 RDS（ON）=10Ω@ VGS=-5 V •电压控制p沟道小信号开关 •高密度电池设计的低RDS（ON） •高饱和电流 |
