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SI1555DL-T1-GE3 Complex FET 20V/-8V 660mA/-570mA SOT-363/SC70-6 marking RB
最大源漏极电压Vds Drain-Source Voltage | 20V/-8V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 12V/8V |
最大漏极电流Id Drain Current | 660mA/-570mA |
源漏极导通电阻Rds Drain-Source On-State Resistance | 630mΩ@ VGS =2.5V, ID =400mA/1.8Ω@ VGS =-2.5V, ID =-250mA |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.6~1.4V/-0.45~1V |
耗散功率Pd Power Dissipation | 270mW/0.27W |
Description & Applications | Complementary Low-Threshold MOSFET Pair |
描述与应用 | 低阈值MOSFET对互补 |