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2SA1797-P PNP transistors(BJT) -50V -3A 200MHz 82~180 -150mV/-0.15V SOT-89/MPT marking AGP

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
-3A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
82~180
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−150mV/-0.15V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & ApplicationsPower Transistor (−50V, −3A) Features 1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / −50mA. 2) Excellent DC current gain characteristics. 3) Complements the 2SC4672.
描述与应用功率晶体管(-50V,-3A) 特点 1)低饱和电压。 VCE(sat)=-0.35V(最大)在IC/ IB=-1A/-50mA的。 2)优秀DC电流增益特性。 3)补充2SC4672。
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