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AT-31625-TR1 NPN Transistors(BJT) 16V 320mA/0.32A 1.9GHz 80~330 4.8V SOT-223 marking AT316
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 16V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 9.5V |
集电极连续输出电流IC Collector Current(IC) | 320mA/0.32A |
截止频率fT Transtion Frequency(fT) | 1.9GHz |
直流电流增益hFE DC Current Gain(hFE) | 80~330 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 4.8V |
耗散功率Pc Power Dissipation | 28mW |
Description & Applications | 4.8 V NPN Common Emitter Medium Power Output Transistor Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz,Typ. • 70% Collector Efficiency @␣ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz, Typ. • -31 dBc IMD3 @ Pout of 21␣ dBm per Tone, 900␣ MHz,Typ. • 50% Smaller than SOT-223 Package Applications • Medium Power Driver Device for Cellular/PCS,ISM 900, WLAN • Output Power Device for ISM 900, Cordless, WLAN |
描述与应用 | 4.8 V共发射极NPN 中等输出功率晶体管 特点 •4.8伏操作 •+28.0 dBm功率输出@900 MHz的典型。 •70%的集热效率␣900兆赫,典型值。 •9 dB功率增益@ 900 MHz时,典型值。 •-31 dBc的IMD3@功率输出,21␣dBm每个音,900␣兆赫,典型值。 •50%小于SOT-223封装 应用 •中等功率驱动器 蜂窝/ PCS,ISM900,WLAN设备 •输出功率ISM900,无绳电话,无线局域网设备 |