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2SB1599GQL PNP transistors(BJT) -50V -3A 150MHz 80~160 -1000mV/-1V SOT-89/SC-62 marking 1XQ poweramplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−40V
集电极连续输出电流IC
Collector Current(IC)
-3A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
80~160
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-1000mV/-1V
耗散功率Pc
PoWer Dissipation
1W
Description & ApplicationsPNP Silicon epitaxial planar transistor For power amplification Complementary to 2SD2457 Features Low collector to emitter saturation voltage VCE(sat) Mini Power type package
描述与应用PNP硅外延平面晶体管 对于功率放大 补充型2SD2457 特点 低集电极到发射极饱和电压VCE(SAT) 迷你功率型封装
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