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2SB1599GQL PNP transistors(BJT) -50V -3A 150MHz 80~160 -1000mV/-1V SOT-89/SC-62 marking 1XQ poweramplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流IC Collector Current(IC) | -3A |
截止频率fT Transtion Frequency(fT) | 150MHz |
直流电流增益hFE DC Current Gain(hFE) | 80~160 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | -1000mV/-1V |
耗散功率Pc PoWer Dissipation | 1W |
Description & Applications | PNP Silicon epitaxial planar transistor For power amplification Complementary to 2SD2457 Features Low collector to emitter saturation voltage VCE(sat) Mini Power type package |
描述与应用 | PNP硅外延平面晶体管 对于功率放大 补充型2SD2457 特点 低集电极到发射极饱和电压VCE(SAT) 迷你功率型封装 |