My order
Share to:  
Location:Home > Stock Inventory > Product Details

RN1107MFV NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 10k 47k SOT-723/VESM marking XH switch inverting circuit interface circuit and driver circuit

Hot selling goods

Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
电阻比(R1/R2) Resistance Ratio0.213
直流电流增益hFE DC Current Gain(hFE)80
截止频率fT Transtion Frequency(fT)250MHz
耗散功率Pc Power Dissipation0.15W/150mW
Description & ApplicationsSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN2107MFV to RN2109MFV
描述与应用开关,逆变电路,接口电路, 驱动器电路应用 适合非常高密度安装的超小型封装, 结合到该晶体管的偏置电阻器的数量减少 部件,所以使制造的更加紧凑的设备和 降低了组装成本。 宽范围的电阻值是可用于在各种电路。 互补的RN2107MFV RN2109MFV的
List of related models

Record / license number:粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00