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2SA1955-B PNP transistors（BJT） -15V -400mA/-0.4A 130MHz 500~1000 -110mV/-0.11V sot-523/SSM marking GB general amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -15V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -12V |
| 集电极连续输出电流IC Collector Current(IC) | -400mA/-0.4A |
| 截止频率fT Transtion Frequency(fT) | 130MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 500~1000 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -110mV/-0.11V |
| 耗散功率Pc PoWer Dissipation | 100mW/0.1W |
| Description & Applications | silicon PNP epitaxial type general purpose amplifier applications； switching and muting switch application； low saturation voltage； large collector current |
| 描述与应用 | 硅PNP外延型 通用放大器应用; 开关静音开关应用; 低饱和电压; 大的集电极电流 |
