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2SK3325B-ZK-E2-AY N-Channel DMOS FET 500V 10A MARKING K3325B
| Drain-Source Voltage （Vds） | 500V |
|
Vgs(±) Gate-Source Voltage |
30V |
| Drain Current （Id） | 10A |
| Drain-Source On-State （Rds） | 0.65Ω~0.85Ω |
|
Vgs （th） Gate-Source Threshold Voltage |
|
| Power dissipation （Pd） | |
| Description & Applications | SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
• Low gate charge:
QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
• Gate voltage rating: ±30 V
• Low on-state resistance
RDS(on) = 0.85 Ω MAX. (VGS = 10 V, ID = 5.0 A)
• Avalanche capability ratings
• TO-220AB, TO-262, TO-263 package
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