Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
2SJ668 MOSFET P-Channel Vds= -60V Id=-5A Rds=0.16~0.25ohm SOT-252 marking J668
| 最大源漏极电压Vds Drain-Source Voltage |
-60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
±20V |
| 最大漏极电流Id Drain Current |
-5A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance |
0.16Ω~0.25Ω @VGS=−4V, ID=−2.5A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
Vth =−0.8 to −2.0 V (VDS=−10 V,ID =−1 mA) |
| 耗散功率Pd Power Dissipation |
20W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII). Relay Drive, DC/DC Converter and Motor Drive. Applications. *4 V gate drive. * Low drain−source ON-resistance: RDS (ON) = 0.12 Ω (typ.). * High forward transfer admittance: |Yfs| = 5.0 S (typ.). * Low leakage current: IDSS = −100 μA (max) (VDS = −60 V). * Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA). |
| 描述与应用 | 东芝场效应晶体管的硅P沟道MOS型（U-MOSIII）。 继电器驱动器，DC/ DC转换器和马达驱动电路。 应用程序。 * 4 V栅极驱动。 *低漏源导通电阻RDS（ON）= 0.12Ω（典型值）。 *较强的正向转移导纳：YFS|=5.0 S（典型值）。 *低漏电流IDSS=-100μA（最大值）（VDS=60V）。 *增强模式：VTH= -0.8到-2.0 V（VDS=-10 V，ID=-1毫安）。 |
