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2SC5548 High Voltage Switching NPN 600V 2A TO252 MARKING C5548
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
600v |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
370V |
集电极连续输出电流IC Collector Current(IC) |
2A |
截止频率fT Transtion Frequency(fT) |
|
直流电流增益hFE DC Current Gain(hFE) |
50~120 |
管压降VCE(sat) Collector-Emitter Saturation Voltage |
1.0 |
耗散功率Pc Power Dissipation |
1W |
Description & Applications | TOSHIBA Transistor Silicon NPN Triple Diffused Type. High Voltage Switching Applications. Switching Regulator Applications. DC-DC Converter Applications. * High speed switching: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.8 A). * High collector breakdown voltage: VCEO = 370 V. * High DC current gain: hFE = 60 (min) (IC = 0.2 A). |
描述与应用 | 东芝晶体管的硅NPN三重扩散类型。 高电压开关应用。 开关稳压器应用。 DC-DC转换器应用。 *高速开关:TR=0.5us(最大),TF=0.3us(最大)(IC= 0.8 A)。 *高集电极击穿电压:VCEO= 370 V。 *高直流电流增益:HFE=60(min)(IC= 0.2 A)。 |