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PUMB11 PNP/PNP resistor-equipped transistors; -50V -0.1A R1=R2=10KΩ 180MHZ SOT363 MARKING B11
|
V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-50V |
| Collector Current(IC) | -100MA/-0.1A |
| Input Resistance(R1) | 10KΩ |
| Base-Emitter Resistance(R2) | 10KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 1 |
| DC Current Gain(hFE) | |
| Transtion Frequency(fT) | 180mhz |
| Power Dissipation （Pd） | 200MW/0.2W |
| Description & Applications | PNP/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.
*100 mA output current capability
* Reduces component count
* Built-in bias resistors
* Reduces pick and place costs
*Simplifies circuit design
*Low current peripheral driver
*Control of IC inputs
*Replaces general-purpose transistors in digital applications
|
| Technical Documentation Download | Read Online |
