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BCP52TA PNP transistors(BJT )-60V 1A 150MHZ 40~250 -0.5V SOT-223 MARKING BCP52
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | --60V | ||||||||
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -60V | ||||||||
集电极连续输出电流ICCollector Current(IC) | -1A | ||||||||
截止频率fTTranstion Frequency(fT) | 150MHZ | ||||||||
直流电流增益hFEDC Current Gain(hFE) | 40~250 | ||||||||
管压降VCE(sat)Collector-Emitter SaturationVoltage | -0.5V | ||||||||
耗散功率PcPoWer Dissipation | 2W | ||||||||
Description & Applications | IC = -1A Continuous Collector Current | • Low Saturation Voltage VCE(sat) < -500mV @ -0.5A | • Gain groups 10 and 16 | • Epitaxial Planar Die Construction | • Complementary NPN types: BCP54, 55 and 56 | • Lead-Free, RoHS Compliant (Note 1) | • Halogen and Antimony Free. “Green” Devices (Note 2) | • Qualified to AEC-Q101 Standards for High Reliability | |
描述与应用 |