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  • Model:2SK303
  • Manufacturer:HUABAN
  • Date Code:08+ROHS
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:V3
  • Package:SOT-23/SC-59/CP

最大源漏极电压Vds
Drain-Source Voltage
30v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-30v
漏极电流(Vgs=0V)IDSS
Drain Current
1.2~3ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-1~-4v
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & Applications•Silicon N-Channel Junction FET Low-Frequency General- Purpose Amp Applications Ideal for potentiometers, analog switches, low frequency amplifiers, constant current supplies, and impedance conversion.
描述与应用•硅N沟道结型场效应管低频率 通用放大器应用 非常适于电位器,模拟开关,低频放大器,恒流电源,和阻抗转换。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SK303
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