集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC
Collector Current(IC) | 2.75A |
截止频率fT
Transtion Frequency(fT) | 165MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~400 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 320mV/0.32V |
耗散功率Pc
Power Dissipation | 500mW/0.5W |
| Description & Applications | SOT89 NPN SILICON POWER(SWITCHING) TRANSISTOR 2W POWER DISSIPATION 6A PEAK PULSE CURRENT EXCELLENT hFE CHARACTERISTICS UP TO 6 Amps EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ EXTREMELY LOW EQUIVALENT ON-RESISTANCE |
| 描述与应用 | SOT89 NPN硅功率（开关）晶体管 功耗为2W 6A峰值脉冲电流 优秀HFE特性6安培的 极低的饱和电压，例如典型13MV 极低的等效导通电阻 |