| 最大源漏极电压Vds Drain-Source Voltage | 150V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 1.4A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 475mΩ@ VGS = 6V, ID = 1.3A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2~4V |
| 耗散功率Pd Power Dissipation | 1.6W |
| Description & Applications | 150V N-Channel Power Trench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC/DC converte Features • 1.4 A, 150 V. RDS(ON) • High performance trench technology for extremely low RDS(ON) • Low gate charge (8nC typ) • High power and current handling capability • Fast switching speed |
| 描述与应用 | 150V N沟道功率沟槽MOSFET 概述 此N沟道MOSFET已专门设计，以提高整体效率的DC / DC转换器采用同步或传统开关PWM控制器。它已被优化低栅极电荷，低RDS（ON）和快速开关速度。 应用 •DC/ DC转换器具 特点 •1.4 A，150 V的RDS（ON） •高性能沟道技术极低的RDS（ON） •低栅极电荷（8NC典型值） •高功率和电流处理能力 •开关速度快 |