集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -12V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | -12V |
集电极连续输出电流IC
Collector Current(IC) | -3A |
截止频率fT
Transtion Frequency(fT) | 110MHz |
直流电流增益hFE
DC Current Gain(hFE) | 160~240 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -230mV/-0.23VV |
耗散功率Pc
PoWer Dissipation | 2W |
| Description & Applications | PNP SILICON POWER (SWITCHING) TRANSISTOR FEATURES * 2W POWER DISSIPATION * 10A Peak Pulse Current * Excellent HFE Characteristics up to 10 Amps * Extremely Low Saturation Voltage E.g. 12mv Typ. * Extremely Low Equivalent On-resistance |
| 描述与应用 | PNP硅POWER（开关）晶体管 特点 *2W功耗 *10A峰值脉冲电流 *优秀HFE特性 *极低的饱和电压 *极低的等效导通电阻; |