| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 77mΩ@ VGS = 4.5V, ID = 2A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.3~2.5V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Current Switching Applications Power Management Switch Applications • 4.5Vdrive • Low on resistance: :Ron = 77 mΩ (max) (@VGS = 4.5 V) :Ron = 50 mΩ (max) (@VGS = 10 V) |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 高电流开关应用 电源管理开关应用 •4.5Vdrive •低电阻:: RON =77MΩ（最大）（@ VGS= 4.5 V） ：RON= 50MΩ（最大）（@ VGS=10 V） |