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2SA1314 PNP transistors(BJT) -20V -2A 140MHz 300~600 -200mV/-0.2V SOT-89/SC-62 marking TC strobe flash
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −20V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -10V |
集电极连续输出电流IC Collector Current(IC) | -2A |
截止频率fT Transtion Frequency(fT) | 140MHz |
直流电流增益hFE DC Current Gain(hFE) | 300~600 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −200mV/-0.2V |
耗散功率Pc PoWer Dissipation | 500mW/0.5W |
Description & Applications | Transistor silicon PNP epitaxial type audio power applications; strobe flash applications; high DC current gain and excellent linearity; low saturation voltage; |
描述与应用 | 晶体硅外延型PNP 音频功率应用; 闪光灯的应用; 高直流增益,出色的线性度; 低饱和电压 |