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2SA1415S PNP transistors（BJT） -180V -140mA/-0.14A 150MHz 140~280 -140mV/-0.14V SOT-89/PCP marking AA-S 预 driver
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -180V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -160V |
| 集电极连续输出电流IC Collector Current(IC) | -140mA/-0.14A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 140~280 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -140mV/-0.14V |
| 耗散功率Pc PoWer Dissipation | 500mW/0.5W |
| Description & Applications | PNP/NPN epitaxial planar silicon transistors High-voltage switching Predriver applications adoption of FBET process； high breakdown voltage ； excellent linearity of hFE and small Cob； fast switching speed |
| 描述与应用 | PNP/ NPN外延平面硅晶体管 高压开关 预驱动器应用 采纳的FBET过程; 击穿电压高; 卓越的HFE线性度; 开关速度快 |
