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2SA1728-4 PNP transistors（BJT） -50V -500mA/-0.5A 350MHz 100~200 -200mV/-0.2V SOT-23/CP marking DS4 highspeed switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) | 350MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −200mV/-0.2V |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP Epitaxial planar silicon transistor High-speed switching applications adoption of FBET process； low collector-to-emitter saturation voltage； fast switching speed |
| 描述与应用 | PNP外延平面硅晶体管 高速开关应用 采纳的FBET过程; 低集电极 - 发射极饱和电压; 开关速度快 |
