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2SA1727TLP PNP transistors（BJT） -400V -500mA/-0.5A 12MHz 135~270 -1000mV/-1V TO-252/DPAK marking A1727 high breakdown voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -400V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -400V |
| 集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) | 12MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 135~270 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -1000mV/-1V |
| 耗散功率Pc PoWer Dissipation | 1W |
| Description & Applications | High-voltage Switching Transistor Features 1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA. 3) High switching speed, typically tf : 1 s at IC = 100mA. 4) Wide SOA (safe operating area). |
| 描述与应用 | 高压开关晶体管 特点 1）高击穿电压BVCEO= 400V。 2）低饱和电压，通常VCE（sat）的IC / IB= 0.3V=100mA/10毫安的。 3）高开关速度，通常是TF：IC=100MA1秒。 4）宽安全工作区（SOA） |
