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2SA1812 PNP transistors（BJT） -400V -500mA/-0.5A 12MHz 82~180 -1000mV/-1V SOT-89/MPT marking AJP high breakdown voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-400V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
-400V |
| 集电极连续输出电流IC Collector Current(IC) |
−500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) |
12MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
82~180 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage |
-1000mV/-1V |
| 耗散功率Pc PoWer Dissipation |
500mW/0.5W |
| Description & Applications | Features high breakdown voltage； low Vce； high switching speed |
| 描述与应用 | 特点 击穿电压高; 低Vce; 高开关速度 |
