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2SA2012 PNP transistors(BJT) -30V -5A 350MHz 200~560 -210mV/-0.21V SOT-89/PCP marking AS DC-DCconvertor/relay driver

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−30V
集电极连续输出电流IC
Collector Current(IC)
-5A
截止频率fT
Transtion Frequency(fT)
350MHz
直流电流增益hFE
DC Current Gain(hFE)
200~560
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-210mV/-0.21V
耗散功率Pc
PoWer Dissipation
3.5W
Description & ApplicationsPNP Silicon epitaxial Transistor For DC-DC converter applications Applications Relay drivers, lamp drivers, motor drivers, strobes. Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall-sized package permitting applied sets to be made small and slim. High allowable power dissipation.
描述与应用PNP硅外延晶体管 DC-DC转换器应用 应用 继电器驱动器,灯驱动器,电机驱动器,闪光灯。 特点 通过MBIT流程。 大电流容量。 低集电极 - 发射极饱和电压。 高速开关。 集小型和超薄超小尺寸封装允许应用。 高允许功耗。
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