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2SB1118T PNP transistors（BJT） -20V -700mA/-0.7A 250MHz 200~400 -120mV/-0.12V SOT-89/PCP marking BAT low voltage high current amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −15V |
| 集电极连续输出电流IC Collector Current(IC) | -700mA/-0.7A |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -120mV/-0.12V |
| 耗散功率Pc PoWer Dissipation | 500mW/0.5W |
| Description & Applications | PNP Silicon epitaxial planar transistor Low-Voltage High-Current Amplifier,Muting Applications Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, small-sized hybrid IC’s. |
| 描述与应用 | PNP硅外延平面晶体管 低电压高电流放大器，静音应用 特点 低集电极 - 发射极饱和电压。 体积非常小，因此很容易提供高密度，小型混合IC。 |
