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2SB1118T PNP transistors(BJT) -20V -700mA/-0.7A 250MHz 200~400 -120mV/-0.12V SOT-89/PCP marking BAT low voltage high current amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−15V
集电极连续输出电流IC
Collector Current(IC)
-700mA/-0.7A
截止频率fT
Transtion Frequency(fT)
250MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-120mV/-0.12V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & ApplicationsPNP Silicon epitaxial planar transistor Low-Voltage High-Current Amplifier,Muting Applications Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, small-sized hybrid IC’s.
描述与应用PNP硅外延平面晶体管 低电压高电流放大器,静音应用 特点 低集电极 - 发射极饱和电压。 体积非常小,因此很容易提供高密度,小型混合IC。
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