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2SB1519 PNP transistors（BJT） -50V -2A 120~300 -300mV/-0.3V SOT-89/SC-62 marking FS high voltageamplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | -2A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 120~300 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 1W |
| Description & Applications | PNP Silicon epitaxial planar transistor High Voltage Amplifier Features Low saturation voltage Large current capacitance |
| 描述与应用 | PNP硅外延平面晶体管 高电压放大器 特点 低饱和电压 大电流容量 |
