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2SB799 PNP transistors(BJT) -60V -700mA/-0.7A 120MHz 200~400 -160mV/-0.16V SOT-89/SC-62 marking MK low collector saturation voltage
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
−50V |
集电极连续输出电流IC Collector Current(IC) |
-700mA/-0.7A |
截止频率fT Transtion Frequency(fT) |
120MHz |
直流电流增益hFE DC Current Gain(hFE) |
200~400 |
管压降VCE(sat) Collector-Emitter SaturationVoltage |
-160mV/-0.16V |
耗散功率Pc PoWer Dissipation |
2W |
Description & Applications | PNP silicon epitaxial transistor power mini mold low collector saturation voltage; complementary to 2SD1000 |
描述与应用 | PNP硅外延晶体管 电源小型模具 集电极饱和电压低; 2SD1000互补 |