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2SC4207-BL NPN Transistors(BJT) 60V 150mA/0.15A 80MHz 350~700 100mV/0.1V SOT-153/SMV marking LL radio general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
150mA/0.15A
截止频率fT
Transtion Frequency(fT)
80MHz
直流电流增益hFE
DC Current Gain(hFE)
350~700
管压降VCE(sat)
Collector-Emitter Saturation Voltage
100mV/0.1V
耗散功率Pc
Power Dissipation
300mW/0.3W
Description & ApplicationsTOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Small package High voltage and high current High hFE Excellent hFE linearity Complementary to 2SA1618
描述与应用东芝晶体管的硅NPN外延式(PCT的进程) 音频通用放大器应用 小型封装 高电压和高电流 高HFE 优秀HFE线性 与2SA1618互补
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