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2SC5180 NPN Transistors(BJT) 5V 10mA 15.5GHz 70~140 SOT-343 marking T84 low noisemicrowave amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
5V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
3V
集电极连续输出电流IC
Collector Current(IC)
10mA
截止频率fT
Transtion Frequency(fT)
15.5GHz
直流电流增益hFE
DC Current Gain(hFE)
70~140
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
30mW
Description & ApplicationsNPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain |S21e|*2 = 12 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|*2=11 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • Super Mini-Mold package
描述与应用NPN外延硅晶体管超超小型模具包装 低噪声微波放大 特点 •低电流消耗和高增益 | S21E|* 2 =12 dBTYP。 @ VCE= 2 V,IC =7毫安,F =2吉赫 | S21E|* 2 =11 dBTYP。 @ VCE= 1 V,IC= 5毫安,F =2吉赫 •超级迷你模具包装
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