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2SC5191 NPN Transistors(BJT) 9V 100mA/0.1A 4.5Ghz 80~160 SOT-23/SC-59 marking T88 low noisemicrowave amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 9V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 6V |
集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
截止频率fT Transtion Frequency(fT) | 4.5Ghz |
直流电流增益hFE DC Current Gain(hFE) | 80~160 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | |
耗散功率Pc Power Dissipation | 200mW/0.2W |
Description & Applications | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB . @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB . @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Mini Mold Package |
描述与应用 | 微波低噪声放大器 NPN硅外延晶体管 特点 •低电压操作,低相位失真 •低噪声 NF=1.5分贝。 @ VCE= 3 V,IC =7毫安,F =2吉赫 NF=1.7分贝。 @ VCE= 1 V,IC =3毫安,F =2吉赫 •大绝对最大集电极电流 IC= 100 mA时 •迷你模具包装 |