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2SC5186 NPN Transistors(BJT) 5V 30mA 11GHz 70~140 SOT-523 marking 86 low noisemicrowave amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 5V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 2V |
| 集电极连续输出电流IC Collector Current(IC) | 30mA |
| 截止频率fT Transtion Frequency(fT) | 11GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 70~140 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 90mW |
| Description & Applications | NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Ultra Super Mini-Mold package |
| 描述与应用 | NPN外延硅晶体管超超小型模具包装 低噪声微波放大 特点 •低噪声 NF= 1.3 dB（典型值）。 @ VCE= 2 V，IC =3毫安，F =2吉赫 NF= 1.3 dB（典型值）。 @ VCE= 1 V，IC =3毫安，F =2吉赫 •超超级迷你模具包装 |
