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2SC5194 NPN Transistors(BJT) 9V 100mA/0.1A 5GHz 80~160 SOT-343 marking T88 low noisemicrowave amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
9V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
6V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
5GHz
直流电流增益hFE
DC Current Gain(hFE)
80~160
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & ApplicationsMICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB . @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB . @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4 pin compact Mini Mold Package
描述与应用微波低噪声放大器 NPN硅外延晶体管 特点 •低电压操作,低相位失真 •低噪声 NF=1.5分贝。 @ VCE= 3 V,IC =7毫安,F =2吉赫 NF=1.7分贝。 @ VCE= 1 V,IC =3毫安,F =2吉赫 •大绝对最大集电极电流 IC= 100 mA时 •4引脚紧凑型迷你模具包装
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