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2SC5195 NPN Transistors(BJT) 9V 100mA/0.1A 5GHz 80~160 SOT-523 marking 88 low noisemicrowave amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 9V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 5GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 80~160 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 125mW/0.125W |
| Description & Applications | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB . @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB . @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Supercompact Mini Mold Package |
| 描述与应用 | 微波低噪声放大器 NPN硅外延晶体管 特点 •低电压操作，低相位失真 •低噪声 NF=1.5分贝。 @ VCE= 3 V，IC =7毫安，F =2吉赫 NF=1.5分贝。 @ VCE= 1 V，IC =3毫安，F =2吉赫 •大绝对最大集电极电流 IC= 100 mA时 •小型模具Supercompact包装 |
