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2SC5674 NPN Transistors(BJT) 15V 35mA 21GHz 50~150 sot-923 marking C5 high frequency low noise

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
15V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
3.3V
集电极连续输出电流IC
Collector Current(IC)
35mA
截止频率fT
Transtion Frequency(fT)
21GHz
直流电流增益hFE
DC Current Gain(hFE)
50~150
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
115mW/0.115W
Description & ApplicationsNPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 21.0 GHz TYP., S21e*2 = 11.5 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt • 3-pin lead-less minimold package (1005 PKG)
描述与应用NPN硅RF晶体管 高频低噪声 扁平引线3引脚超薄型超超迷你 特点 •非常适于3 GHz或更高OSC的应用 •低噪声,高增益 FT =21.0 GHz的TYP。,S21E*2  =11.5 dB。 @ VCE= 2 V,IC=20 mA时,F =2吉赫 NF= 1.1 dB。 @ VCE= 2 V,IC=5毫安,F =2 GHz时,ZS= Zopt •3引脚引线迷你包装(1005封装)
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