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2SC5996A-T111-1B NPN Transistors(BJT) 50V 200mA/0.2A 30MHz 350~1200 30mV SOT-323/SC-70 marking 9B low-frequency amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流IC Collector Current(IC) | 200mA/0.2A |
| 截止频率fT Transtion Frequency(fT) | 30MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 350~1200 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 30mV |
| 耗散功率Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION ISAHAYA 2SC5996 is a super mini package resin sealed silicon NPN epitaxial transistor for muting and switching application FEATURES ・Small packege for mounting ・High Emitter to Base voltage VEBO=50V ・High Reverse hFE ・Low ON RESISTANCE. RON=1Ω APPLICATION For muting, switching application |
| 描述与应用 | 小信号晶体管 对于低频放大应用 硅NPN外延型 说明 谏早2SC5996是一个超小型封装树脂密封 NPN硅外延晶体管静音和开关应用 特点 ·安装小装量 ·高发射器基极电压VEBO= 50V ·高反向HFE ·低导通电阻。 RON=1Ω 应用 静音，切换应用程序 |
