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2SD1733TLR NPN Transistors(BJT) 100V 1A 100MHz 120~270 150mV/0.15V TO-252/CPT3 marking D1733 power

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
100V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
80V
集电极连续输出电流IC
Collector Current(IC)
1A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
120~270
管压降VCE(sat)
Collector-Emitter Saturation Voltage
150mV/0.15V
耗散功率Pc
Power Dissipation
1W
Description & ApplicationsPower Transistor (80V, 1A) Features * High VCEO, VCEO = 80V * High IC, IC = 1A (DC) * Good hFE linearity. * Low VCE(sat). structure Epitaxial planar type NPN silicon transistor
描述与应用功率晶体管(80V,1A) 特点 *高VCEO VCEO=80V *高IC IC= 1A(DC) *良好的HFE线性。 *低VCE(SAT)。 结构 外延平面型 NPN硅晶体管
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