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2SD1963 NPN Transistors(BJT) 50V 3A 150MHz 120~270 250mV/0.25V SOT-89/SC-62/MPT3 marking DGQ power
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流IC Collector Current(IC) |
3A |
| 截止频率fT Transtion Frequency(fT) |
150MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
120~560 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
250mV/0.25V |
| 耗散功率Pc Power Dissipation |
500mW/0.5W |
| Description & Applications | Power Transistor (-50V, -3A) featrues low saturation voltage excellent DC current gain characteristics |
| 描述与应用 | 功率晶体管（-50V，-3A） 特点 低饱和电压 出色的DC电流增益特性 |
