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2SD1979-T NPN Transistors(BJT) 50V 500mA/0.5A 80MHz 800~2500 100mV/0.1V SOT-323/SC-70 marking 3WT low voltageoutput amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
20V
集电极连续输出电流IC
Collector Current(IC)
500mA/0.5A
截止频率fT
Transtion Frequency(fT)
80MHz
直流电流增益hFE
DC Current Gain(hFE)
800~2500
管压降VCE(sat)
Collector-Emitter Saturation Voltage
100mV/0.1V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & Applicationsapplication Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Features Low ON resistance Ron High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automAtic insertion through the tape packing and the mAgazine packing
描述与应用应用 NPN硅外延平面型 对于低电压输出放大 对于静音 用于DC-DC转换器 特点 低导通电阻Ron 高FOWARD电流传输比HFE。 S-迷你型包装,使瘦身的设备和 通过自动插入带包装盒包装
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