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2SD1979-S NPN Transistors(BJT) 50V 500mA/0.5A 80MHz 500~1500 100mV/0.1V SOT-323/SC-70 marking 3WS low voltageoutput amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
| 截止频率fT Transtion Frequency(fT) | 80MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 500~1500 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | application Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Features Low ON resistance Ron High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automAtic insertion through the tape packing and the mAgazine packing |
| 描述与应用 | 应用 NPN硅外延平面型 对于低电压输出放大 对于静音 用于DC-DC转换器 特点 低导通电阻Ron 高FOWARD电流传输比HFE。 S-迷你型包装，使瘦身的设备和 通过自动插入带包装盒包装 |
