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2SD1998 NPN Transistors(BJT) 40V 3A 100MHz >70 200mV/0.2V SOT-89/PCP marking DM
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 40V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 30V |
集电极连续输出电流IC Collector Current(IC) | 3A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | >70 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 200mV/0.2V |
耗散功率Pc Power Dissipation | 1.5W |
Description & Applications | applications NPN epitaxial planar silicon transistors compact motor driver applications features *low saturation voltage *contains diode between collector and emitter *contains bias resistances between base and emitter *large current capacity *smAll size mAke it easy to provide high density smAll size hybird ics |
描述与应用 | 应用 NPN外延平面硅晶体管 紧凑型电机驱动器应用 特点 *低饱和电压 *包含集电极和发射极之间的二极管 *包含偏置基极和发射极之间的电阻 *大电流容量 *体积小,可以很容易地提供高密度,小尺寸摄录集成电路 |