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2SD2216-R NPN Transistors(BJT) 60V 100mA/0.1A 150MHz 210 ~ 340 100mV/0.1V SOT-523/SC-75 marking YR general amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 210 ~ 340 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率Pc Power Dissipation | 125mW/0.125W |
| Description & Applications | Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1462 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat) |
| 描述与应用 | NPN硅外延平面型 对于一般的放大 互补2SB1462 特点 高FOWARD电流传输比HFE。 低集电极到发射极饱和电压VCE（SAT） |
