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2SD2212 NPN Transistors(BJT) 60V 2A 1000~10000 1.5V SOT-89/SC-62/MPT3 marking DR
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 60V |
| 集电极连续输出电流IC Collector Current(IC) | 2A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 1000~10000 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 1.5V |
| 耗散功率Pc Power Dissipation | 2W |
| Description & Applications | Medium Power Transistor(Motor, Relay drive) (60±10V, 2A) Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L"loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. |
| 描述与应用 | 中等功率晶体管（电机，继电器驱动器）（60±10V，2A） 特点 1）内置集电极和基极之间的齐纳二极管。 2）强大的保护免受反向浪涌由于负载为“L”。 3）内置基极和发射极之间的电阻。 4）内置阻尼二极管。 |
