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2SD2216J-QR(K8).SO NPN Transistors(BJT) 60V 100mA/0.1A 150MHz 210 ~ 340 100mV/0.1V SOT-523/SC-75 marking YR general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
210 ~ 340
管压降VCE(sat)
Collector-Emitter Saturation Voltage
100mV/0.1V
耗散功率Pc
Power Dissipation
125mW/0.125W
Description & ApplicationsSilicon NPN epitaxial planer type For general amplification Complementary to 2SB1462J Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)
描述与应用NPN硅外延平面型 对于一般的放大 互补2SB1462J的 特点 •高正向电流传输比HFE •低集电极 - 发射极饱和电压VCE(sat)
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