My order
Share to:  
Location:Home > Stock Inventory > Product Details

2SD2351 NPN Transistors(BJT)Vcbo= 60V Vceo=50v Ic=150mA/0.15A ft=250MHz HFE=820~1800 Vce=300mV/0.3V SOT-323/SC-70/UMT3 marking BJV

Hot selling goods

Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
150mA/0.15A
截止频率fT
Transtion Frequency(fT)
250MHz
直流电流增益hFE
DC Current Gain(hFE)
820~2700
管压降VCE(sat)
Collector-Emitter Saturation Voltage
300mV/0.3V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & Applications General Purpose Transistor (50V, 0.15A) Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)
描述与应用 通用晶体管(50V,0.15A) 特点 1)高DC电流增益。 2)高发射基地电压。 (VCBO12V) 3)低饱和电压。 (典型值VCE(sat)=0.3V IC / IB=50mA/5mA)
List of related models

Record / license number:粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00